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PD- 93762
IRF7807D2
FETKY ? MOSFET / SCHOTTKY DIODE
? Co-Pack N-channel HEXFET ? Power MOSFET
and Schottky Diode
? Ideal for Synchronous Rectifiers in DC-DC
Converters up to 5A Output
? Low Conduction Losses
? Low Switching Losses
? Low Vf Schottky Rectifier
SO-8
A/S
A/S
A/S
G
1
2
3
4
Top View
8
7
6
5
K/D
K/D
K/D
K/D
D
Description
The FETKY ? family of Co-Pack HEXFET ? MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power
MOSFETs utilize advanced processing techniques to
Device Features (Max Values)
achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier’s
low forward drop Schottky rectifiers results in an extremely
efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
V DS
R DS (on)
Q g
Q SW
Q oss
IRF7807D2
30V
25m ?
14nC
5.2nC
21.6nC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Max.
30
±12
Units
V
Continuous Drain or Source
25°C
I D
8.3
Current (V GS ≥ 4.5V)
Pulsed Drain Current ?
70°C
I DM
6.6
66
A
Power Dissipation
Schottky and Body Diode
Average ForwardCurrent ?
25°C
70°C
25°C
70°C
P D
I F (AV)
2.5
1.6
3.7
2.3
W
A
Junction & Storage Temperature Range
T J , T STG
–55 to 150
°C
Thermal Resistance
Parameter
Max.
Units
Maximum Junction-to-Ambient ?
www.irf.com
R θ JA
50
°C/W
1
11/8/99
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相关代理商/技术参数
IRF7807D2HR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 8.3A 8SOIC - Rail/Tube
IRF7807D2PBF 功能描述:MOSFET 30V FETKY 30 VBRD 25mOhms 2.9nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7807D2PBF 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR TRANSISTOR TYPE:MOSFET
IRF7807D2TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
IRF7807D2TRPBF 功能描述:MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IRF7807PBF 制造商:International Rectifier 功能描述:MOSFET, 30V, 8.3A, 25 MOHM, 12 NC QG, SO-8 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 8.3A 8SOIC - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N LOGIC SO-8 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, SO-8 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation ;RoHS Compliant: Yes
IRF7807PBF 制造商:International Rectifier 功能描述:MOSFET N 2.5W 8-SOIC